ReRAM, or resistive memory cells, is a kind of non-volatile memory that shares certain similarities with the memory shift process because both are called memory processing types. ReRAM, also known as RRAM (Resistive Random Access Memory), is regarded as a type of memristor technology — a passive two-terminal electronic system designed to convey only the property of an electronic component that allows it to remember the last resistance it had before it was shut down.
ReRAM stores data uses ions (charged atoms), rather than electrons, as variations in electrical resistance. Resistive memory can decrease the energy consumption of modern IT systems while increasing efficiency, according to researchers at the Jülich Aachen Research Alliance (JARA). In resistive switching memory cells (ReRAMs), ions work in a similar manner to a battery on a nanometer scale. For example, the cells have two electrodes made of silver and platinum, at which the ions dissolve and then precipitate again. This modifies the electrical resistance, which can be used to store data. There is also another consequence of the reduction and oxidation processes — they produce electric voltage. ReRAM explicitly works by producing physical defects in a layer of oxide material using the tool. Such defects are called oxygen vacancies, and the ReRAM behaves like a semiconductor but with oxygen ions; such vacancies represent two values in a binary scheme, instead of the electrons and holes of a semiconductor.
A number of companies currently have proprietary versions of ReRAM. Different types of ReRAM are based on the use of different dielectric materials, including metal oxides.
Higher switching speed is a significant benefit of RRAM over other non-volatile storage technologies like the NAND flash. Observed timescales are as short as 10 nanoseconds. Memristor filaments can occur in dimensions as low as a few nanometers, a tiny fraction of the visible light wavelength in free space, promising high storage capacity. The occasional creation of unintended filaments, called sneak routes, presents a problem for engineers who are bent on improving memristor technology and RRAM devices on a wide scale.
Also, ReRAM and other memristor technologies draw substantially less power than NAND flash. That makes them better suited for memory in manufacturing, automotive and Internet of Things (IoT) applications in sensor devices currently. As production costs for ReRAM and other memristors go down, they are competitive with NAND light. Higher memory capacity, faster read and write rates, and lower power draw are reasons why memristor-based memory technologies are frequently cited as the logical substitute in applications such as solid-state drives (SSDs) and non-volatile dual inline memory modules (NVDIMMs).
Key players
The key players in the ReRAM market are Crossbar Inc. (US), Fujitsu Limited (Japan), Intel Corporation (US), Panasonic Corporation (Japan), Semiconductor Manufacturing International Corporation (China), SK Hynix Inc. (South Korea), Adesto Technologies Corporation (US), Micron Technology, Inc. (US), TSMC (Taiwan), 4DS Memory Limited (US), and Reliance Memory (China), Sony Corporation (Japan), SanDisk (US), Weebit Nano (Australia), and Rambus Incorporated (US).
Regional Analysis
The global ReRAM market is projected to grow at a significant rate during the forecast period from 2019 to 2025. The geographic analysis of the global ReRAM Market has been conducted for North America, Europe, Asia-Pacific, the Middle East & Africa, and Central and South America.
Asia-Pacific holds the largest market share in the ReRAM market, owing to the growing demand for non-volatile memory enabled electronic devices such as smartphones and high-resolution TVs. The rising number of consumer electronics and the automotive industry in this region is driving the growth of the ReRAM market. Developing countries such as India, Japan, and China are establishing data centers, AI and IoT connected infrastructure, which is expected to fuel the growth of ReRAM market in Asia-Pacific. North America holds second largest market share in the ReRAM market. The increasing demand for enterprise storage applications is driving the growth of ReRAM market in this region. The market in the Middle East and Africa is expected to show significant growth during the forecast period. For instance, Israeli firm Weebit Nano is developing ReRAM products based on silicon oxide, which means the ReRAM chips can be manufactured in existing labs without having to retool the equipment.
More Information@
About Market Research Future:
At Market Research Future (MRFR), we enable our customers to unravel the complexity of various industries through our Cooked Research Reports (CRR), Half-Cooked Research Reports (HCRR), Raw Research Reports (3R), Continuous-Feed Research (CFR), and Market Research and Consulting Services.
Contact:
Market Research Future
+1 646 845 9312
Email: [email protected]
Reram Market ShareThe global ReRAM market is expected to grow from USD 310.6 million in 2018 to USD ~655 million by 2025, at a CAGR of ~16% during the forecast period.ReRAM is a non-volatile memory that consumes low power and has the potential to replace flash memory, currently used in mobile phones and MP3 players.
ReRAM can be used as a storage medium such as flash, DRAM, or hard drive.
Many companies are developing innovative ReRAM technology solutions that are cheaper, faster, more reliable, and more energy-efficient than existing flash RAM technology.
ReRAM is cost-effective and efficient among emerging memory technologies as it requires few masks in the silicon bed and can be integrated into an MCU.
However, the ReRAM has several reliability issues, such as limited write endurance, resistance drift, susceptibility to process variation (PV).Key playersThe key players in the ReRAM market are Crossbar Inc. (US), Fujitsu Limited (Japan), Intel Corporation (US), Panasonic Corporation (Japan), Semiconductor Manufacturing International Corporation (China), SK Hynix Inc. (South Korea), Adesto Technologies Corporation (US), Micron Technology, Inc. (US), TSMC (Taiwan), 4DS Memory Limited (US), and Reliance Memory (China), Sony Corporation (Japan), SanDisk (US), Weebit Nano (Australia), and Rambus Incorporated (US).Regional AnalysisThe global ReRAM market is projected to grow at a significant rate during the forecast period from 2019 to 2025.
The geographic analysis of the global ReRAM Market has been conducted for North America, Europe, Asia-Pacific, the Middle East & Africa, and Central and South America.Asia-Pacific holds the largest market share in the ReRAM market, owing to the growing demand for non-volatile memory enabled electronic devices such as smartphones and high-resolution TVs.
Reram MarketThe sudden challenges created by the ongoing COVID-19 are captured effectively to exhibit the long term growth projections in the MRFR report on Reram Market.
The growth sectors of the Reram Market are identified with precision for a better growth perspective.The global ReRAM market is expected to grow from USD 310.6 million in 2018 to USD ~655 million by 2025, at a CAGR of ~16% during the forecast period.ReRAM is a non-volatile memory that consumes low power and has the potential to replace flash memory, currently used in mobile phones and MP3 players.
ReRAM can be used as a storage medium such as flash, DRAM, or hard drive.
Many companies are developing innovative ReRAM technology solutions that are cheaper, faster, more reliable, and more energy-efficient than existing flash RAM technology.
ReRAM is cost-effective and efficient among emerging memory technologies as it requires few masks in the silicon bed and can be integrated into an MCU.
However, the ReRAM has several reliability issues, such as limited write endurance, resistance drift, susceptibility to process variation (PV).Key playersThe key players in the ReRAM market are Crossbar Inc. (US), Fujitsu Limited (Japan), Intel Corporation (US), Panasonic Corporation (Japan), Semiconductor Manufacturing International Corporation (China), SK Hynix Inc. (South Korea), Adesto Technologies Corporation (US), Micron Technology, Inc. (US), TSMC (Taiwan), 4DS Memory Limited (US), and Reliance Memory (China), Sony Corporation (Japan), SanDisk (US), Weebit Nano (Australia), and Rambus Incorporated (US).Regional AnalysisThe global ReRAM market is projected to grow at a significant rate during the forecast period from 2019 to 2025.
