Decrease in prices of GaN devices, increase in demand for GaN devices for wireless charging, and rise in adoption of GaN devices in electric vehicle have boosted the growth of the global GaN power device market. In addition, increase in requirement of GaN devices for commercial RF applications augments the growth of the market. On the other hand, lack of availability of GaN material hampers the market growth to some extent. Moreover, government initiatives in HVDC and smart grid are expected to create an array of opportunities in the industry.
The global GaN Power device market was estimated at $110.3 million in 2019 and is expected to hit $1.24 billion by 2027, registering a CAGR of 35.4% from 2020 to 2027. The report provides a detailed analysis of the top investment pockets, top winning strategies, drivers & opportunities, market size & estimations, competitive landscape, and changing market trends.
COVID 19 scenarios:
- The increase in storage demand from data centers due to remote working boosted the growth of the market.
- In addition, the supporting sectors including healthcare and medical devices, and telecommunications fuel the market growth amid COVID 19.
Based on product, the GaN power modules segment contributed to nearly half of the total market revenue in 2019, and is anticipated to rule the roost by the end of 2027. Whereas, the GaN power ICs segment is projected to manifest the fastest CAGR of 38.6% throughout the forecast period.
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Based on end user, the IT and telecommunication segment accounted for around one-third of the global market share in 2019, and is expected to dominate during the study period. At the same time, the automotive segment would portray the fastest CAGR of 38.7% through 2027.
Based on geography, North America held the lion’s share in 2019, accounting for nearly half of the total market share and is anticipated to lead the trail from 2020 to 2027. Simultaneously, Asia-pacific would showcase at the fastest CAGR of 37.5% during the period. The report also analyzes the market across Europe and LAMEA.
The key market players analyzed in the global GaN power device market report are GaN Systems, Efficient Power Conversion Corporation (EPC), Panasonic Corporation, On Semiconductors, Texas Instruments Inc., VisIC, Fujitsu Limited, Toshiba Corporation, Taiwan Semiconductor Manufacturing Company, and Infineon Technologies AG. These market players have taken recourse to several strategies including partnership, expansion, collaboration, joint ventures, and others to prove their stand in the industry.
Further, this report also highlights smart strategy adopted by major players and also their market share.
Basically, this report is designed to give a proper understanding of industry structure and competition intensity attractiveness.The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide.
The major players in the GaN power device market include Efficient Power Conversion Corporation (EPC), GaN Systems, On Semiconductors, Panasonic Corporation, VisIC, Texas Instruments Inc., Toshiba Corporation, Fujitsu Limited, Infineon Technologies AG, Taiwan Semiconductor Manufacturing Company.
This section includes a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.Get more information on "Global GaN Power Device Market Research Report" by requesting FREE Sample Copy athttps://www.valuemarketresearch.com/contact/gan-power-device-market/download-sampleMarket DynamicsThe market for GaN power devices has been growing steadily since the increase in the use of various electronics for our daily activities.
The increase in demand for telecommunication devices, LIDAR, AC adaptors, and various wireless devices has been acting as the main catalyst for the GaN power devices market.
The only restraint being faced by the market for GaN devices is the preference towards silicon-based devices when it comes to operating at high voltages.
RF GaN Semiconductor Device Market ShareWhat is RF GaN Semiconductor Device?Over the last decade, Gallium Nitride (GaN) has flaunted the technology as the future for high power cellular base stations that will displace silicon LDMOS devices.About GaN—Gallium nitride—GaN is a material that is generally used in the production of semiconductor power devices as well as RF components and light-emitting diodes (LEDs).
GaN has labeled with the capability to become the displacement technology for silicon semiconductors, mainly in power conversion, RF, and analog applications.Seeing as the dawn of the electronics age since a hundred years ago, power design engineers have been on an expedition for the ideal switch that will rapidly and efficiently convert raw electrical energy into a controlled and useful flow of electrons.GaN ascension to the forefront of the RF semiconductor industry comes at a crucial moment in the evolution of commercial wireless infrastructure.
It is proven performance leadership over LDMOS technology that is driving its adoption within the newest generation of 4G LTE base stations.Market Research Future (MRFR), asserts in its recently published research report, that the Global RF GaN (Gallium Nitride) arket is projected to grow at 21.6% CAGR, witnessing considerable growth over the review period.
Demand for RF amplifiers with a higher rate of data transmission, higher frequency, and power has led to the expansion in GaN RF device technology.
The numerous factors attributing to the growth of global RF GaN market are growing adoption of RF GaN power mechanisms for energy & power applications and increase in demand for IT & telecommunication equipment that employ RF GaN power devices.
More commonly, the role of this driver in the device is to be the electrical line among the lower-voltage digital output of the microprocessor-based controller or the same circuitry and the higher-voltage with high current, slew-rate demands of the power-switching device.With this, there is much more to the role of RF GaN device than this.
