(Nagoya Institute of Technology) Gallium nitride (GaN) semiconductors are considered to be a future alternative to silicon, not least due to their superior performance in fast switching applications. However, unwanted impurities in GaN crystals can degrade their switching performance. In a new study, scientists from Nagoya Institute of Technology, Japan explore the mechanism behind the impact of carbon impurities on the charge carriers of GaN, paving the way for impurity control strategies in GaN crystal growth.
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