GaN Semiconductor Devices Market report published by Value Market Research, which studies the future outlook of the market. It includes the size, share, growth, trends, key players, segments and regional analysis in detail during the study year 2022-2030.
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the gan semiconductor devices market include Cree Inc. (U.S.), Efficient Power Conversion Corporation (U.S.), Fujitsu Ltd. (Japan), GaN Systems Inc. (Canada), Infineon Technologies AG (Germany), NXP Semiconductor N.V. (Netherlands), NextGen Power Systems Inc. (U.S.), Qorvo Inc. (U.S.), Toshiba Corporation (Japan), Texas Instruments Incorporated (U.S.) among others. This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
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Market Dynamics
The increasing demand for high-power and high-frequency electronic systems and devices is a significant driver for these devices. Industries such as telecommunications, aerospace and defence, automotive, and power electronics require devices that can handle high power levels and operate at high frequencies while maintaining efficiency and reliability. GaN semiconductor devices offer superior performance in these areas compared to traditional semiconductor materials, driving their adoption with several advantages over traditional semiconductor materials like silicon. GaN exhibits higher breakdown voltage, higher electron mobility, and better thermal conductivity, allowing for higher power density, higher operating frequencies, and improved efficiency. These advantages make GaN devices appealing for a wide range of applications, including power electronics, wireless communication systems, and automotive systems. The need for energy-efficient electronics is driving the adoption of GaN semiconductor devices. GaN devices offer higher efficiency and better thermal management, leading to reduced power consumption and improved energy utilization. Industries such as power electronics, electric vehicles, and renewable energy systems are increasingly incorporating GaN devices in order to optimize energy efficiency and scale down the environmental impact. The deployment of 5G wireless networks worldwide is a significant driver for GaN semiconductor devices. GaN devices, with their ability to handle high frequencies and high power levels, are well-suited for 5G infrastructure, including base stations, RF amplifiers, and antennas. The aerospace and defence sectors have a strong demand for these components due to their ability to operate in harsh environments and withstand high temperatures. Both industry players and academic institutions are investing in developing new materials, improving manufacturing processes, and enhancing the performance of GaN devices. These research and development efforts drive innovation, reduce costs, and expand the range of applications.
The research report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of gan semiconductor devices. The growth and trends of gan semiconductor devices industry provide a holistic approach to this study.
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Market Segmentation
This section of the gan semiconductor devices market report provides detailed data on the segments at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.
By Wafer Size
- 2-Inch
- 4-Inch
- 6-Inch And Above
By Device Type
- Opto-Semiconductor
- RF Semiconductor
- Power Semiconductor
By Application
- Power Drivers
- Radio Frequency
- Supply And Inverter
- Lighting And Laser
By Component
- Rectifier
- Power Ic
- Transistor
- Diode
- Other
Regional Analysis
This section covers the regional outlook, which accentuates current and future demand for the GaN Semiconductor Devices market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.
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Additionally, GaN is the emerging substitute to pure silicon in the semiconductor sector.
The properties of GaN are intense power efficient compound which is capable of working with high frequency and has the ability to emit high brightness and intensity when used in opto-semiconductor.Gallium nitride semiconductor has more advantages over silicon technology in terms of temperature and power handling capacity.
Gallium nitride has unique properties such as high-speed switching capacity, low resistance, high current density, high operating temperature, and a high dielectric strength.
Gallium nitride semiconductor devices are extensively used in different industrial sectors such as automotive, telecommunications, consumer electronics, and medical sectors.GaN semiconductor is presumed to have a greater demand in power electronics sector attributed to its exceptional ability to control electrons more than 1000 times that of silicon and is manufactured at low cost.However, increase in demand for wireless devices, the rapid evolution of automated devices and low-cost manufacturing is expected to drive the gallium semiconductor market over the forecast period.
On the other hand, the dust produced while manufacturing of GaN semiconductor creates serious concern to human health such as irritation to human eyes, skin and lungs which eventually increases the shielding outfit expenses used for manufacturing purposes which are expected to hinder the growth of GaN semiconductor market over the forecast period.Additionally, silicon carbide (SiC) based semiconductor is expected to be an extensive competition for GaN semiconductor over the forecast period between 2017- 2022.Key Players The key players of GaN semiconductor devices Market includes Fujitsu Ltd (Japan), Panasonic Semiconductors (Japan), Texas Instruments (U.S.),RF Micro Devices Corporation (U.S.), Osram Opto-semiconductors (Germany), Cree Incorporated (U.S.), Toshiba (Japan), Aixtron SE (Germany), Infineon Technologies (Germany), Gallia Semiconductor (Belgium), ROHM Company Limited (Japan), .
Lastly, the gallium nitride semiconductor devices are sub-segmented into end user which include automotive, aerospace & defense, consumer electronics, telecommunication, and medical.Regional AnalysisGeographically, the gallium nitride (GaN) semiconductor devices are segmented into five different regions namely North America, Asia Pacific, Europe, the Middle East & Africa, and Latin America.North America is presumed to be a prominent region in gallium nitride semiconductor devices market.
GaN RF Semiconductor Devices Market Market Research Future (MRFR), studied the impact of COVID crisis on the global RF GaN Semiconductor Device Market 2020 for the assessment period.
As per MRFR study, the RF GaN semiconductor market is likely to touch USD 1,607.23 Mn on the conclusion of the forecast period 2019–2025.
The RF GaN semiconductor market is likely to thrive at 20.3% CAGR across the assessment period.
The role of RF GaN semiconductor device in the wireless infrastructure for the development of cell phones, space and satellite communications, television broadcasting, radio, radar, MRI machines, and military communications can boost the expansion of the RF GaN market across the study period.
In addition, the increase need for RF GaN devices in the production of IT & telecommunication equipment can driver for the expansion of the market across the globe in the forecast period.
The widespread utility of gallium nitride (GaN) in microwave applications and radio frequency (RF) to enhance productivity of different devices can spur the expansion of the GaN semiconductor market across the review period.
