The global GaN Semiconductor Device market was valued at US$ 953.6 million in 2023 and is projected to reach US$ 1241.5 million by 2030, at a CAGR of 3.8% during the forecast period.
The USA market for Global GaN Semiconductor Device market is estimated to increase from USD million in 2023 to reach USD million by 2030, at a CAGR during the forecast period of 2023 through 2030.
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The China market for Global GaN Semiconductor Device market is estimated to increase from USD million in 2023 to reach USD million by 2030, at a CAGR during the forecast period of 2023 through 2030.
The Europe market for Global GaN Semiconductor Device market is estimated to increase from USD million in 2023 to reach USD million by 2030, at a CAGR during the forecast period of 2023 through 2030.
This research report provides a comprehensive analysis of the GaN Semiconductor Device market, focusing on the current trends, market dynamics, and future prospects. The report explores the global GaN Semiconductor Device market, including major regions such as North America, Europe, Asia-Pacific, and emerging markets. It also examines key factors driving the growth of GaN Semiconductor Device, challenges faced by the industry, and potential opportunities for market players.
The global GaN Semiconductor Device market has witnessed rapid growth in recent years, driven by increasing environmental concerns, government incentives, and advancements in technology. The GaN Semiconductor Device market presents opportunities for various stakeholders, including Automotive, Consumer Electronics. Collaboration between the private sector and governments can accelerate the development of supportive policies, research and development efforts, and investment in GaN Semiconductor Device market. Additionally, the growing consumer demand present avenues for market expansion.
The global market for semiconductor was estimated at US$ 579 billion in the year 2022, is projected to US$ 790 billion by 2029, growing at a CAGR of 6% during the forecast period. Although some major categories are still double-digit year-over-year growth in 2022, led by Analog with 20.76%, Sensor with 16.31%, and Logic with 14.46% growth, Memory declined with 12.162% year over year. The microprocessor (MPU) and microcontroller (MCU) segments will experience stagnant growth due to weak shipments and investment in notebooks, computers, and standard desktops. In the current market scenario, the growing popularity of IoT-based electronics is stimulating the need for powerful processors and controllers. Hybrid MPUs and MCUs provide real-time embedded processing and control for the topmost IoT-based applications, resulting in significant market growth. The Analog IC segment is expected to grow gradually, while demand from the networking and communications industries is limited. Few of the emerging trends in the growing demand for Analog integrated circuits include signal conversion, automotive-specific Analog applications, and power management. They drive the growing demand for discrete power devices.
Key Features:
The research report on the GaN Semiconductor Device market includes several key features to provide comprehensive insights and facilitate decision-making for stakeholders.
Executive Summary: The report provides overview of the key findings, market trends, and major insights of the GaN Semiconductor Device market.
Market Overview: The report provides a comprehensive overview of the GaN Semiconductor Device market, including its definition, historical development, and current market size. It covers market segmentation by Type (e.g., Power Semiconductors, Opto Semiconductors), region, and application, highlighting the key drivers, challenges, and opportunities within each segment.
Market Dynamics: The report analyses the market dynamics driving the growth and development of the GaN Semiconductor Device market. The report includes an assessment of government policies and regulations, technological advancements, consumer trends and preferences, infrastructure development, and industry collaborations. This analysis helps stakeholders understand the factors influencing the GaN Semiconductor Device market's trajectory.
Competitive Landscape: The report provides an in-depth analysis of the competitive landscape within the GaN Semiconductor Device market. It includes profiles of major market players, their market share, strategies, product portfolios, and recent developments.
Market Segmentation and Forecast: The report segment the GaN Semiconductor Device market based on various parameters, such as by Type, region, and by Application. It provides market size and growth forecasts for each segment, supported by quantitative data and analysis. This helps stakeholders identify growth opportunities and make informed investment decisions.
Technological Trends: The report should highlight the key technological trends shaping the GaN Semiconductor Device market, such as advancements in Type One technology and emerging substitutes. It analyses the impact of these trends on market growth, adoption rates, and consumer preferences.
Market Challenges and Opportunities: The report identify and analyses the major challenges faced by the GaN Semiconductor Device market, such as technical bottleneck, cost limitations, and high entry barrier. It also highlights the opportunities for market growth, such as government incentives, emerging markets, and collaborations between stakeholders.
Regulatory and Policy Analysis: The report should assess the regulatory and policy landscape for GaN Semiconductor Device, including government incentives, emission standards, and infrastructure development plans. It should analyse the impact of these policies on market growth and provide insights into future regulatory developments.
Recommendations and Conclusion: The report conclude with actionable recommendations for stakeholders, such as Application One Consumer, policymakers, investors, and infrastructure providers. These recommendations should be based on the research findings and address key challenges and opportunities within the GaN Semiconductor Device market.
Supporting Data and Appendices: The report include supporting data, charts, and graphs to substantiate the analysis and findings. It also includes appendices with additional detailed information, such as data sources, survey questionnaires, and detailed market forecasts.
Market Segmentation
GaN Semiconductor Device market is split by Type and by Application. For the period 2019-2030, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value.
Market segment by Type
- Power Semiconductors
- Opto Semiconductors
- RF Semiconductors
Market segment by Application
- Automotive
- Consumer Electronics
- Aerospace & Defense
- Healthcare
- Information & Communication Technology
- Other
Global GaN Semiconductor Device Market Segment Percentages, By Region and Country, 2023 (%)
- North America (United States, Canada, Mexico)
- Europe (Germany, France, United Kingdom, Italy, Spain, Rest of Europe)
- Asia-Pacific (China, India, Japan, South Korea, Australia, Rest of APAC)
- The Middle East and Africa (Middle East, Africa)
- South and Central America (Brazil, Argentina, Rest of SCA)
Major players covered
- Toshiba
- Panasonic
- Cree
- GaN Systems
- Infineon Technologies
- OSRAM
- Efficient Power Conversion
- NXP Semiconductors
- Texas Instruments
- NTT Advanced Technology
Outline of Major Chapters:
Chapter 1: Introduces the definition of GaN Semiconductor Device, market overview.
Chapter 2: Global GaN Semiconductor Device market size in revenue and volume.
Chapter 3: Detailed analysis of GaN Semiconductor Device manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 6: Sales of GaN Semiconductor Device in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Global GaN Semiconductor Device capacity by region & country.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 11: The main points and conclusions of the report.
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RF GaN Semiconductor Device MarketThe sudden challenges created by the ongoing COVID-19 are captured effectively to exhibit the long term growth projections in the MRFR report on RF GaN Semiconductor Device Market.
The growth sectors of the RF GaN Semiconductor Device Market are identified with precision for a better growth perspective.According to Market Research Future, the global RF GaN semiconductor device market has been segmented based on material, application, end user, and region.The demand for RF amplifiers with a high rate of data transmission, higher frequency, and power has led to the development of GaN RF device technology.
Factors contributing to the growth of the global RF GaN market are increasing adoption of RF GaN power devices for energy & power applications and rise in demand for IT & telecommunication equipment that use RF GaN power devicesIn March 2018, Cree, Inc. announced the acquisition of Infineon Technologies’ AG radio frequency (rf) power business for approximately € 345 million.
The transaction would expand the Cree Wolfspeed business unit’s wireless market and also strengthen Wolfspeed’s leadership in RF GaN-on-SiC technology, as well as provides access to additional markets, customers, and packaging expertise.The global RF GaN semiconductor device market has been segmented based on sensor type, application, and region.Based on material type, the market has been segmented into GaN-On-SiC, GaN-On-Silicon, and GaN-On-Diamond.
The GaN-on-SiC segment holds the largest market share; it is expected to register the highest CAGR during the forecast period due to various benefits offered by it including high thermal conductivity, performance, reliability, and cut-off frequency which increases its adoption across different industry verticals.Based on applications the market has been segmented into wireless infrastructure, power storage, satellite communication, PV inverter, others.
The wireless segment led the market in 2018 due to the increasing requirement of devices with low power consumption and increasing overall efficiency in performance.Based on end user, the market has been segmented into aerospace & defense, IT & telecom, consumer electronics, automotive, and others.
RF GaN Semiconductor Device MarketMarket Research Future (MRFR), asserts in its recently published research report, that the Global RF GaN (Gallium Nitride) arket is projected to grow at 21.6% CAGR, witnessing considerable growth over the review period.
The market was assessed at USD 415.3 million in 2017 and is touted to reach USD 1295.5 million by 2023.Drivers and RestraintsThe past decade has exhibited significant growth in the RF GaN market, which has reshaped the RF power devices landscape.
moreover, innovation in linearization and power efficiency of RF power amplifiers will create opportunities for major market players during the forecast period.
Based on the application, the RF GaN market has been segmented into aerospace, IT and telecommunication, and military and defense.GaN Success or AdvantagesIt takes a suitably matched and configured driver to make sure that the switching device—GaN operates to its full qualifications and does not have unplanned issues.
More commonly, the role of this driver in the device is to be the electrical line among the lower-voltage digital output of the microprocessor-based controller or the same circuitry and the higher-voltage with high current, slew-rate demands of the power-switching device.With this, there is much more to the role of RF GaN device than this.
The need for the current high enough rate to swiftly charge the input capacitance of the device and to turn it on, yet it must quickly and crisply pull that charge from the gate input without ringing or overshoot.At most, the factors define the top-tier concerns of GaN devices and its advantages—The maximum gate voltage allowable is the gate threshold voltage and the body diode voltage drop.
